Multiple-Valued Logic-in-Memory VLSI Based on Ferroelectric Capacitor Storage and Charge Addition

A multiple-valued logic-in-memory VLSI using ferroelectric capacitors is proposed to realize an arithmeticoriented VLSI with real-time programmable capacitor storage. The use of a remnant-polarization charge on a ferroelectric capacitor makes it possible to perform not only a real-time programmable storage function, but also a linearsum function, thereby resulting in a compact hardware while maintaining a high-speed processing capability. As a design example, a full adder with a storage capability is evaluated. Its performance is superior to that of a corresponding binary CMOS implementation.